Self-consistent 2-D model for quantum effects in n-MOS transistors

IEEE Transactions on Electron Devices

Volumn 45, Issue 6, 1998, Pages 1342-1349

  Spinelli, Alessandro S ^a,b   Benvenuti, Augusto ^a   Pacelli, Andrea ^a  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

Mos devices; Quantization; Semiconductor device modeling

Indexed keywords

ALGORITHMS; CHARGE CARRIERS; COMPUTER SIMULATION; CONVERGENCE OF NUMERICAL METHODS; ELECTRONIC PROPERTIES; QUANTUM THEORY; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CARRIER QUANTIZATION;

MOSFET DEVICES;

EID: 0032098559     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.678567     Document Type: Article

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