Self-consistent modeling of longitudinal quantum effects in nanoscale double-gate metal oxide semiconductor field effect transistors

Journal of Applied Physics

Volumn 100, Issue 8, 2006, Pages

  Heinz, Frederik O ^a,c   Schenk, Andreas ^a,b  

^a ETH ZURICH   (Switzerland)

^b SYNOPSYS SWITZERLAND LLC   (Switzerland)

^c INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTH; QUANTUM COHERENT LIMIT; SCATTERING WAVES; WAVE FUNCTIONS;

BOUNDARY CONDITIONS; GATES (TRANSISTOR); SCATTERING; SILICON ON INSULATOR TECHNOLOGY;

MOSFET DEVICES;

EID: 33750497101     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2355540     Document Type: Article

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