Raman stress maps from finite-element models of silicon structures

Journal of Applied Physics

Volumn 100, Issue 3, 2006, Pages

  Bonera, Emiliano ^a   Fanciulli, Marco ^a   Carnevale, Gianpietro ^b  

^a LABORATORIO MDM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL MAPPING; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; MICROELECTRONICS; OPTICAL RESOLVING POWER; RAMAN SPECTROSCOPY; STRESS ANALYSIS;

FINITE SPATIAL RESOLUTION; MICROMETRIC SCALE;

SILICON;

EID: 33747338402     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2219899     Document Type: Article

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