Simulation of quantum effects along the channel of ultrascaled Si-based MOSFETs

IEEE Transactions on Electron Devices

Volumn 49, Issue 4, 2002, Pages 652-657

  Chen, Wanqiang ^b   Register, Leonard F ^b   Banerjee, Sanjay K ^a,b  

^a IEEE

^b The University of Texas at Austin   (United States)

Author keywords

Device simulation; SiGe; Ultrasmall MOSFETs

Indexed keywords

COMPUTER SIMULATION; HETEROJUNCTIONS; KINETIC ENERGY; QUANTUM THEORY; SCATTERING; SEMICONDUCTING SILICON;

QUANTUM EFFECTS;

MOSFET DEVICES;

EID: 0036541428     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.992875     Document Type: Article

References (12)

1. Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices
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5. Nanoscale device modeling: The Green's function method
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7. New structural approach for reducing punchthrough current in deep submicrometer MOSFETs and extending MOSFET scaling
8. A novel Si/SiGe heterojunction pMOSFET with reduced short-channel effects and enhanced drive current
9. x channel PMOSFETs