Low-field mobility in strained silicon with 'full band' Monte Carlo simulation using k.p and EPM bandstructure

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2006, Pages 264-266

  Feraille, M ^a   Rideau, D ^a   Ghetti, A ^b   Poncet, A ^c   Tavernier, C ^a   Jaouen, H ^a  

^a STMICROELECTRONICS   (France)

^b STMICROELECTRONICS   (Italy)

^c Lab de Physique de la Matiere   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BENCHMARKING; COMPUTER SIMULATION; MONTE CARLO METHODS;

MONTE CARLO TRANSPORT SIMULATIONS; STRAINED SILICON;

SILICON;

EID: 42549148017     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2006.282886     Document Type: Conference Paper

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