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Volumn 21, Issue 4, 2006, Pages

Multi sub-band Monte Carlo simulation of an ultra-thin double gate MOSFET with 2D electron gas

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON GAS; MICROSCOPIC EXAMINATION; PHASE EQUILIBRIA; THIN FILMS;

EID: 33644985373     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/4/L01     Document Type: Article
Times cited : (67)

References (9)
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    • Saint-Martin J et al 2006 Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation Solid-State Electron. 50 94-101
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  • 2
    • 0029752460 scopus 로고    scopus 로고
    • A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFET's
    • Hareland S A et al 1996 A computationally efficient model for inversion layer quantization effects in deep submicron N-channel MOSFET's IEEE Trans. Electron Devices 43 90-6
    • (1996) IEEE Trans. Electron Devices , vol.43 , Issue.1 , pp. 90-96
    • Hareland, S.A.1
  • 3
    • 1442287315 scopus 로고    scopus 로고
    • Double gate silicon on insulator transistors. A Monte Carlo study
    • Gamiz F et al 2004 Double gate silicon on insulator transistors. A Monte Carlo study Solid-State Electron. 48 937-45
    • (2004) Solid-State Electron. , vol.48 , Issue.6 , pp. 937-945
    • Gamiz, F.1
  • 4
    • 0347968246 scopus 로고    scopus 로고
    • Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs
    • Esseni D et al 2003 Physically based modeling of low field electron mobility in ultrathin single- and double-gate SOI n-MOSFETs IEEE Trans. Electron Devices 50 2445-55
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.12 , pp. 2445-2455
    • Esseni, D.1
  • 5
    • 24944506537 scopus 로고    scopus 로고
    • Influence of ballistic effects in ultra-small MOSFETs
    • Saint-Martin J et al 2004 Influence of ballistic effects in ultra-small MOSFETs J. Comput. Electron. 3 207-10
    • (2004) J. Comput. Electron. , vol.3 , Issue.3-4 , pp. 207-210
    • Saint-Martin, J.1
  • 6
    • 18644369368 scopus 로고    scopus 로고
    • Simulating quantum transport in nanoscale MOSFETs: Real vs. mode space approaches
    • Venugopal R et al 2002 Simulating quantum transport in nanoscale MOSFETs: real vs. mode space approaches J. Appl. Phys. 92 3730-9
    • (2002) J. Appl. Phys. , vol.92 , Issue.7 , pp. 3730-3739
    • Venugopal, R.1
  • 7
    • 4243227379 scopus 로고
    • Monte Carlo study of electron transport in silicon inversion layers
    • Fischetti M V and Laux S E 1993 Monte Carlo study of electron transport in silicon inversion layers Phys. Rev. B 48 2244-74
    • (1993) Phys. Rev. , vol.48 , Issue.4 , pp. 2244-2274
    • Fischetti, M.V.1    Laux, S.E.2
  • 8
    • 0000853776 scopus 로고    scopus 로고
    • x heterostructures: Electron transport and field-effect transistor operation using Monte Carlo simulation
    • x heterostructures: electron transport and field-effect transistor operation using Monte Carlo simulation J. Appl. Phys. 82 3911-6
    • (1997) J. Appl. Phys. , vol.82 , Issue.8 , pp. 3911-3916
    • Dollfus, P.1
  • 9
    • 1942446352 scopus 로고    scopus 로고
    • Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
    • Monsef F et al 2004 Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation J. Appl. Phys. 95 3587
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    • Monsef, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.