-
1
-
-
21544464097
-
-
"Stress in thermal SiO2 during growth," vol. 35, pp. 8-10, 1979.
-
E. P. EerNisse, "Stress in thermal SiO2 during growth," Appl. Phys. Lett., vol. 35, pp. 8-10, 1979.
-
Appl. Phys. Lett.
-
-
Eernisse, E.P.1
-
2
-
-
0020205589
-
-
"A viscous flow model to explain the appearance of high density thermal SiO2 at low oxidation temperatures," / vol. 129, pp. 2594-2597, 1982.
-
E. A. Irene, E. Tierney, and J. Angilello, "A viscous flow model to explain the appearance of high density thermal SiO2 at low oxidation temperatures," / Electrochem. Soc., vol. 129, pp. 2594-2597, 1982.
-
Electrochem. Soc.
-
-
Irene, E.A.1
Tierney, E.2
Angilello, J.3
-
3
-
-
0024769421
-
-
"Modeling of stress effects in silicon oxidation,"lEEETrans. vol. 36, pp. 2415-2421, Nov. 1989.
-
P. Sutardja and W. G. Oldham, "Modeling of stress effects in silicon oxidation,"lEEETrans. Electron. Devices, vol. 36, pp. 2415-2421, Nov. 1989.
-
Electron. Devices
-
-
Sutardja, P.1
Oldham, W.G.2
-
4
-
-
0022334718
-
-
"Two-dimensional silicon oxidation. Experiments and theory," 388-391, 1985.
-
D.-B. Kao, J. P. McVittie, W. D. Nix, and C. Saraswat, "Two-dimensional silicon oxidation. Experiments and theory," IEDM Tech. Dig., pp. 388-391, 1985.
-
IEDM Tech. Dig., Pp.
-
-
Kao, D.-B.1
McVittie, J.P.2
Nix, W.D.3
Saraswat, C.4
-
5
-
-
84866826108
-
"Modeling and validation of contributions to stress in the shallow trench isolation process sequence," Comput
-
vol. 1, pp. 63-80, 2000.
-
K. Garikipati et al., "Modeling and validation of contributions to stress in the shallow trench isolation process sequence," Comput. Model. Sim. Eng., vol. 1, pp. 63-80, 2000.
-
Model. Sim. Eng.
-
-
Garikipati, K.1
-
7
-
-
0033881843
-
-
"On modeling thermal oxidation of silicon I:Theory," vol. 47, pp. 341-358, 2000.
-
V. S. Rao and T. J. R. Hughes, "On modeling thermal oxidation of silicon I:Theory," Int. J. Numer. Methods Eng., vol. 47, pp. 341-358, 2000.
-
Int. J. Numer. Methods Eng.
-
-
Rao, V.S.1
Hughes, T.J.R.2
-
11
-
-
0042567516
-
-
"Stress-related problems in silicon technology,"/ vol. 70, pp. R53-R80, 1991.
-
S. M. Hu, "Stress-related problems in silicon technology,"/ Appl. Phys., vol. 70, pp. R53-R80, 1991.
-
Appl. Phys.
-
-
Hu, S.M.1
-
12
-
-
4444307840
-
-
"Intrinsic strain in SiO2 thin films," vol. 83, pp. 786-792, 1998.
-
T. J. Delph, "Intrinsic strain in SiO2 thin films," J. Appl. Phys.. vol. 83, pp. 786-792, 1998.
-
J. Appl. Phys..
-
-
Delph, T.J.1
-
13
-
-
0024056374
-
-
et at., "Correlation between stress and structure in chemically vapor depositec silicon nitride films," Thin Solid Films, vol. 162, pp. 129-143, 1988.
-
A. G. Noskov et at., "Correlation between stress and structure in chemically vapor depositec silicon nitride films," Thin Solid Films, vol. 162, pp. 129-143, 1988.
-
-
-
Noskov, A.G.1
-
14
-
-
0001732177
-
-
"Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si," vol. 51, pp. 1416-1418, 1987.
-
L. M. Landsberger and W. A. Tiller, "Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si," Appl. Phys. Lett., vol. 51, pp. 1416-1418, 1987.
-
Appl. Phys. Lett.
-
-
Landsberger, L.M.1
Tiller, W.A.2
-
15
-
-
36448998751
-
-
"Analysis and application of a viscoelastic model for silicon oxidation," vol. 76, pp. 3285-3296, 1994.
-
V. Senez, D. Collard, and B. Baccus, "Analysis and application of a viscoelastic model for silicon oxidation," J. Appl. Phys., vol. 76, pp. 3285-3296, 1994.
-
J. Appl. Phys.
-
-
Senez, V.1
Collard, D.2
Baccus, B.3
-
16
-
-
0012623945
-
-
"Nonlinear viscoelastic dilation of SiO2 films," vol. 54, pp. 151-152, 1989.
-
C. S. Rafferty, L. M. Landsberger, R. W. Dutton, and W. A. Tiller, "Nonlinear viscoelastic dilation of SiO2 films," Appl. Phys. Lett., vol. 54, pp. 151-152, 1989.
-
Appl. Phys. Lett.
-
-
Rafferty, C.S.1
Landsberger, L.M.2
Dutton, R.W.3
Tiller, W.A.4
-
17
-
-
36849125005
-
-
"Viscosity, plasticity, and diffusion as examples of absolute reaction rates," vol. 4, pp. 283-291, 1936.
-
H. Eyring, "Viscosity, plasticity, and diffusion as examples of absolute reaction rates," J. Chem. Phys., vol. 4, pp. 283-291, 1936.
-
J. Chem. Phys.
-
-
Eyring, H.1
-
18
-
-
0019533534
-
-
"Planarization of phosphorus-doped silicon dioxide," vol. 128, p. 2, 1981.
-
A. C. Adams and C. D. Capio, "Planarization of phosphorus-doped silicon dioxide," J. Electrochem. Soc., vol. 128, p. 2, 1981.
-
J. Electrochem. Soc.
-
-
Adams, A.C.1
Capio, C.D.2
-
21
-
-
0030205497
-
"Stable solution method for viscoelastic oxidation including stress-dependent viscosity," Jpn
-
vol. 35, pp. 4265-273, 1996.
-
T. Uchida et al., "Stable solution method for viscoelastic oxidation including stress-dependent viscosity," Jpn. J. Appl. Phys., vol. 35, pp. 4265-273, 1996.
-
J. Appl. Phys.
-
-
Uchida, T.1
-
23
-
-
84866832590
-
-
"Boundary conditions at the oxidation front," in 2000, vol. 2.
-
A. Pomp, "Boundary conditions at the oxidation front," in Advances in Computational Engineering and Science, S. N. Atluri and F. W. Brust, Eds. Palmdale: Tech. Science, 2000, vol. 2.
-
Advances in Computational Engineering and Science, S. N. Atluri and F. W. Brust, Eds. Palmdale: Tech. Science
-
-
Pomp, A.1
-
24
-
-
84866837023
-
-
Integrated Syst. Lab., ETH Zürich, Switzerland, Tech. Rep. 99/15, 1999.
-
A. Pomp, S. Zelenka, N. Strecker, and W. Fichtner, "Viscoelastic material behavior: Models and discretization used in DIOS-ISE," Integrated Syst. Lab., ETH Zürich, Switzerland, Tech. Rep. 99/15, 1999.
-
"Viscoelastic Material Behavior: Models and Discretization Used in DIOS-ISE,"
-
-
Pomp, A.1
Zelenka, S.2
Strecker, N.3
Fichtner, W.4
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