메뉴 건너뛰기




Volumn 47, Issue 10, 2000, Pages 1999-2007

Viscoelastic material behavior: models and discretization used in process simulator DIOS

Author keywords

[No Author keywords available]

Indexed keywords

CONSTITUTIVE EQUATION; ELASTIC SOLID; PROCESS SIMULATORS; SOFTWARE PACKAGE DIOS-ISE;

EID: 0034297792     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.870589     Document Type: Article
Times cited : (15)

References (25)
  • 1
    • 21544464097 scopus 로고    scopus 로고
    • "Stress in thermal SiO2 during growth," vol. 35, pp. 8-10, 1979.
    • E. P. EerNisse, "Stress in thermal SiO2 during growth," Appl. Phys. Lett., vol. 35, pp. 8-10, 1979.
    • Appl. Phys. Lett.
    • Eernisse, E.P.1
  • 2
    • 0020205589 scopus 로고    scopus 로고
    • "A viscous flow model to explain the appearance of high density thermal SiO2 at low oxidation temperatures," / vol. 129, pp. 2594-2597, 1982.
    • E. A. Irene, E. Tierney, and J. Angilello, "A viscous flow model to explain the appearance of high density thermal SiO2 at low oxidation temperatures," / Electrochem. Soc., vol. 129, pp. 2594-2597, 1982.
    • Electrochem. Soc.
    • Irene, E.A.1    Tierney, E.2    Angilello, J.3
  • 3
    • 0024769421 scopus 로고    scopus 로고
    • "Modeling of stress effects in silicon oxidation,"lEEETrans. vol. 36, pp. 2415-2421, Nov. 1989.
    • P. Sutardja and W. G. Oldham, "Modeling of stress effects in silicon oxidation,"lEEETrans. Electron. Devices, vol. 36, pp. 2415-2421, Nov. 1989.
    • Electron. Devices
    • Sutardja, P.1    Oldham, W.G.2
  • 5
    • 84866826108 scopus 로고    scopus 로고
    • "Modeling and validation of contributions to stress in the shallow trench isolation process sequence," Comput
    • vol. 1, pp. 63-80, 2000.
    • K. Garikipati et al., "Modeling and validation of contributions to stress in the shallow trench isolation process sequence," Comput. Model. Sim. Eng., vol. 1, pp. 63-80, 2000.
    • Model. Sim. Eng.
    • Garikipati, K.1
  • 7
    • 0033881843 scopus 로고    scopus 로고
    • "On modeling thermal oxidation of silicon I:Theory," vol. 47, pp. 341-358, 2000.
    • V. S. Rao and T. J. R. Hughes, "On modeling thermal oxidation of silicon I:Theory," Int. J. Numer. Methods Eng., vol. 47, pp. 341-358, 2000.
    • Int. J. Numer. Methods Eng.
    • Rao, V.S.1    Hughes, T.J.R.2
  • 11
    • 0042567516 scopus 로고    scopus 로고
    • "Stress-related problems in silicon technology,"/ vol. 70, pp. R53-R80, 1991.
    • S. M. Hu, "Stress-related problems in silicon technology,"/ Appl. Phys., vol. 70, pp. R53-R80, 1991.
    • Appl. Phys.
    • Hu, S.M.1
  • 12
    • 4444307840 scopus 로고    scopus 로고
    • "Intrinsic strain in SiO2 thin films," vol. 83, pp. 786-792, 1998.
    • T. J. Delph, "Intrinsic strain in SiO2 thin films," J. Appl. Phys.. vol. 83, pp. 786-792, 1998.
    • J. Appl. Phys..
    • Delph, T.J.1
  • 13
    • 0024056374 scopus 로고    scopus 로고
    • et at., "Correlation between stress and structure in chemically vapor depositec silicon nitride films," Thin Solid Films, vol. 162, pp. 129-143, 1988.
    • A. G. Noskov et at., "Correlation between stress and structure in chemically vapor depositec silicon nitride films," Thin Solid Films, vol. 162, pp. 129-143, 1988.
    • Noskov, A.G.1
  • 14
    • 0001732177 scopus 로고    scopus 로고
    • "Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si," vol. 51, pp. 1416-1418, 1987.
    • L. M. Landsberger and W. A. Tiller, "Refractive index, relaxation times and the viscoelastic model in dry-grown SiO2 films on Si," Appl. Phys. Lett., vol. 51, pp. 1416-1418, 1987.
    • Appl. Phys. Lett.
    • Landsberger, L.M.1    Tiller, W.A.2
  • 15
    • 36448998751 scopus 로고    scopus 로고
    • "Analysis and application of a viscoelastic model for silicon oxidation," vol. 76, pp. 3285-3296, 1994.
    • V. Senez, D. Collard, and B. Baccus, "Analysis and application of a viscoelastic model for silicon oxidation," J. Appl. Phys., vol. 76, pp. 3285-3296, 1994.
    • J. Appl. Phys.
    • Senez, V.1    Collard, D.2    Baccus, B.3
  • 17
    • 36849125005 scopus 로고    scopus 로고
    • "Viscosity, plasticity, and diffusion as examples of absolute reaction rates," vol. 4, pp. 283-291, 1936.
    • H. Eyring, "Viscosity, plasticity, and diffusion as examples of absolute reaction rates," J. Chem. Phys., vol. 4, pp. 283-291, 1936.
    • J. Chem. Phys.
    • Eyring, H.1
  • 18
    • 0019533534 scopus 로고    scopus 로고
    • "Planarization of phosphorus-doped silicon dioxide," vol. 128, p. 2, 1981.
    • A. C. Adams and C. D. Capio, "Planarization of phosphorus-doped silicon dioxide," J. Electrochem. Soc., vol. 128, p. 2, 1981.
    • J. Electrochem. Soc.
    • Adams, A.C.1    Capio, C.D.2
  • 21
    • 0030205497 scopus 로고    scopus 로고
    • "Stable solution method for viscoelastic oxidation including stress-dependent viscosity," Jpn
    • vol. 35, pp. 4265-273, 1996.
    • T. Uchida et al., "Stable solution method for viscoelastic oxidation including stress-dependent viscosity," Jpn. J. Appl. Phys., vol. 35, pp. 4265-273, 1996.
    • J. Appl. Phys.
    • Uchida, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.