High performance 65 nm SOI technology with dual stress liner and low capacitance SRAM cell

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 126-127

  Leobandung, E ^a   Nayakama, H ^a   Mocuta, D ^a   Miyamoto, K ^a   Angyal, M ^a   Meer, H V ^a   McStay, K ^a   Ahsan, I ^a   Allen, S ^a   Azuma, A ^a   Belyansky, M ^a   Bentum, R V ^a   Cheng, J ^a   Chidambarrao, D ^a   Dirahoui, B ^a   Fukasawa, M ^a   Gerhardt, M ^a   Gribelyuk, M ^a   Halle, S ^a   Harifuchi, H ^a   Harmon, D ^a   Heaps Nelson, J ^a   Hichri, H ^a   Ida, K ^a   Inohara, M ^a   Inoue, K ^a   Jenkins, K ^a   Kawamura, T ^a   Kim, B ^a   Ku, S K ^a   Kumar, M ^a   Lane, S ^a   Liebmann, L ^a   Logan, R ^a   Melville, I ^a   Miyashita, K ^a   Mocuta, A ^a   O'Neil, P ^a   Ng, M F ^a   Nogami, T ^a   Nomura, A ^a   Norris, C ^a   Nowak, E ^a   Ono, M ^a   Panda, S ^a   Penny, C ^a   Radens, C ^a   Ramachandran, R ^a   Ray, A ^a   Rhee, S H ^a   Ryan, D ^a   Shinohara, T ^a   Sudo, G ^a   Sugaya, F ^a   Strane, J ^a   Tan, Y ^a   Tsou, L ^a   Wang, L ^a   Wirbeleit, F ^a   Wu, S ^a   Yamashita, T ^a   Yan, H ^a   Ye, Q ^a   Yoneyama, D ^a   Zamdmer, N ^a   Zhong, H ^a   Zhu, H ^a   Zhu, W ^a   Agnello, P ^a   Bukofsky, S ^a   Bronner, G ^a   Crabbe E ^a   Freeman, G ^a   Huang, S F ^a   Ivers, T ^a   Kuroda, H ^a   McHerron, D ^a   Pellerin, J ^a   Toyoshima, Y ^a   Subbanna, S ^a   Kepler, N ^a   Su, L ^a   more..

^a IBM RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DUAL STRESS LINER; SOI TECHNOLOGY; SRAM CELL; STRESS NITRIDE LINERS (DSL);

CAPACITANCE; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; NITRIDES; PERFORMANCE; SILICON ON INSULATOR TECHNOLOGY; STRESSES;

STATIC RANDOM ACCESS STORAGE;

EID: 33745148992     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469238     Document Type: Conference Paper

References (3)

1. H.S. Yang et al., IEDM 2004, p. 1075
2. Z. Lou et al, IEDM 2004, p. 661
3. A. Chatterjee et al, IEDM 2004, p.665