-
1
-
-
35949025517
-
The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials
-
C. Jacoboni and L. Reggiani, "The Monte Carlo method for the solution of charge transport in semiconductors with application to covalent materials," Rev. Mod. Phys. 55, 645-705 (1983).
-
(1983)
Rev. Mod. Phys.
, vol.55
, pp. 645-705
-
-
Jacoboni, C.1
Reggiani, L.2
-
2
-
-
0021218341
-
Optical heating of electron-hole plasma in silicon by picosecond pulses
-
L.-A. Lompre, J.-M. Liu, H. Kurz, and N. Bloembergen, "Optical heating of electron-hole plasma in silicon by picosecond pulses," Appl. Phys. Lett. 44, 3-5 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 3-5
-
-
Lompre, L.-A.1
Liu, J.-M.2
Kurz, H.3
Bloembergen, N.4
-
3
-
-
36749107366
-
Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in silicon
-
J.-M. Liu, H. Kurz, and N. Bloembergen, "Picosecond time-resolved plasma and temperature-induced changes of reflectivity and transmission in silicon" Appl. Phys. Lett. 41, 643-646 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.41
, pp. 643-646
-
-
Liu, J.-M.1
Kurz, H.2
Bloembergen, N.3
-
4
-
-
0010594096
-
Observation of an electronic plasma in picosecond laser annealing of silicon
-
D. von der Linde and N. Fabricius, "Observation of an electronic plasma in picosecond laser annealing of silicon," Appl. Phys. Lett. 41, 991-993 (1982).
-
(1982)
Appl. Phys. Lett.
, vol.41
, pp. 991-993
-
-
Von der Linde, D.1
Fabricius, N.2
-
5
-
-
0000977072
-
Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transitions in silicon
-
C. V. Shank, R. Yen, and C. Hirlmann, "Time-resolved reflectivity measurements of femtosecond-optical-pulse-induced phase transitions in silicon," Phys. Rev. Lett. 50, 454-457 (1983).
-
(1983)
Phys. Rev. Lett.
, vol.50
, pp. 454-457
-
-
Shank, C.V.1
Yen, R.2
Hirlmann, C.3
-
6
-
-
0021393046
-
Optical effective mass of high density carriers in silicon
-
H. M. van Driel, "Optical effective mass of high density carriers in silicon," Appl. Phys. Lett. 44, 617-619 (1984).
-
(1984)
Appl. Phys. Lett.
, vol.44
, pp. 617-619
-
-
Van Driel, H.M.1
-
7
-
-
0022576309
-
Effective mass in picosecond laser-produced high-density plasma in silicon
-
G.-Z. Yang and N. Bloembergen, "Effective mass in picosecond laser-produced high-density plasma in silicon," IEEE J. Quantum Electron. QE-22, 195-196 (1986).
-
(1986)
IEEE J. Quantum Electron.
, vol.QE-22
, pp. 195-196
-
-
Yang, G.-Z.1
Bloembergen, N.2
-
8
-
-
0000500916
-
Ultrafast carrier dynamics in silicon: A two-color transient-reflection grating study on a (111) surface
-
T. Sjodin, H. Petek, and H.-L. Dai, "Ultrafast carrier dynamics in silicon: a two-color transient-reflection grating study on a (111) surface," Phys. Rev. Lett. 81, 5664-5667 (1998).
-
(1998)
Phys. Rev. Lett.
, vol.81
, pp. 5664-5667
-
-
Sjodin, T.1
Petek, H.2
Dai, H.-L.3
-
9
-
-
0000803795
-
High-field transport in n-type GaAs
-
E. M. Conwell and M. O. Vassell, "High-field transport in n-type GaAs," Phys. Rev. 166, 797-821 (1968).
-
(1968)
Phys. Rev.
, vol.166
, pp. 797-821
-
-
Conwell, E.M.1
Vassell, M.O.2
-
10
-
-
36149025905
-
Determination of optical constants and carrier effective mass of semiconductors
-
W. G. Spitzer and H. Y. Fan, "Determination of optical constants and carrier effective mass of semiconductors," Phys. Rev. 106, 882-890 (1957).
-
(1957)
Phys. Rev.
, vol.106
, pp. 882-890
-
-
Spitzer, W.G.1
Fan, H.Y.2
-
11
-
-
0042118293
-
Determination of free electron effective mass of n-type silicon
-
L. E. Howarth and J. F. Gilbert, "Determination of free electron effective mass of n-type silicon," J. Appl. Phys. 34, 236-237 (1963).
-
(1963)
J. Appl. Phys.
, vol.34
, pp. 236-237
-
-
Howarth, L.E.1
Gilbert, J.F.2
-
12
-
-
0019532224
-
Change in the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing
-
M. Miyao, T. Motooka, N. Natsuaki, and T. Tokuyama, "Change in the electron effective mass in extremely heavily doped n-type Si obtained by ion implantation and laser annealing," Solid State Commun. 37, 605-608 (1981).
-
(1981)
Solid State Commun.
, vol.37
, pp. 605-608
-
-
Miyao, M.1
Motooka, T.2
Natsuaki, N.3
Tokuyama, T.4
-
13
-
-
0141648763
-
Optical determination of Si conduction-band nonparabolicity
-
A. Borghesi, A. Stella, P. Bottazzi, G. Guizzetti, and L. Reggiani, "Optical determination of Si conduction-band nonparabolicity," J. Appl. Phys. 67, 3102-3106 (1990).
-
(1990)
J. Appl. Phys.
, vol.67
, pp. 3102-3106
-
-
Borghesi, A.1
Stella, A.2
Bottazzi, P.3
Guizzetti, G.4
Reggiani, L.5
-
15
-
-
33746065849
-
Spin-orbit splitting in crystalline and compositionally disordered semiconductors
-
D. J. Chadi, "Spin-orbit splitting in crystalline and compositionally disordered semiconductors," Phys. Rev. B 16, 790-796 (1977).
-
(1977)
Phys. Rev. B
, vol.16
, pp. 790-796
-
-
Chadi, D.J.1
-
17
-
-
0000821177
-
Method for tight-binding parameterization: Application to silicon nanostructures
-
Y. M. Niquet, C. Delerue, G. Allan, and M. Lannoo, "Method for tight-binding parameterization: application to silicon nanostructures," Phys. Rev. 62, 5109-5116 (2000).
-
(2000)
Phys. Rev.
, vol.62
, pp. 5109-5116
-
-
Niquet, Y.M.1
Delerue, C.2
Allan, G.3
Lannoo, M.4
-
18
-
-
0141648764
-
Quantum effects in Ge and Si. I
-
J. J. Stickler, H. J. Zeigler, and G. S. Heller, "Quantum effects in Ge and Si. I," Phys. Rev. 127, 1077-1084 (1962).
-
(1962)
Phys. Rev.
, vol.127
, pp. 1077-1084
-
-
Stickler, J.J.1
Zeigler, H.J.2
Heller, G.S.3
-
19
-
-
36149015916
-
Cyclotron resonance experiments in uniaxially stressed silicon: Valence band inverse mass parameters and deformation potentials
-
J. C. Hensel and G. Feher, "Cyclotron resonance experiments in uniaxially stressed silicon: valence band inverse mass parameters and deformation potentials," Phys. Rev. 129, 1041-1062 (1963).
-
(1963)
Phys. Rev.
, vol.129
, pp. 1041-1062
-
-
Hensel, J.C.1
Feher, G.2
-
20
-
-
0004173642
-
On the interpretation of the observed hole mass shift with uniaxial stress in silicon
-
I. Balslev and P. Lawaetz, "On the interpretation of the observed hole mass shift with uniaxial stress in silicon," Phys. Lett. 19, 6-7 (1965).
-
(1965)
Phys. Lett.
, vol.19
, pp. 6-7
-
-
Balslev, I.1
Lawaetz, P.2
-
22
-
-
0004537209
-
Effects of band non-parabolocity on electron drift velocity in silicon above room temperature
-
C. Jacoboni, R. Minder, and G. Majni, "Effects of band non-parabolocity on electron drift velocity in silicon above room temperature," J. Chem. Phys. Solids 36, 1129-1133 (1975).
-
(1975)
J. Chem. Phys. Solids
, vol.36
, pp. 1129-1133
-
-
Jacoboni, C.1
Minder, R.2
Majni, G.3
-
23
-
-
4243909111
-
Nearinfrared free-carrier optical absorption in silicon: Effect of first-order phonon-assisted scattering in a nonparabolic conduction band
-
G. N. Koskowich, M. Soma, and R. B. Darling, "Nearinfrared free-carrier optical absorption in silicon: effect of first-order phonon-assisted scattering in a nonparabolic conduction band," Phys. Rev. B 41, 2944-2947 (1990).
-
(1990)
Phys. Rev. B
, vol.41
, pp. 2944-2947
-
-
Koskowich, G.N.1
Soma, M.2
Darling, R.B.3
-
27
-
-
2442522754
-
Simplified LCAO method for the periodic potential problem
-
J. C. Slater and G. F. Koster, "Simplified LCAO method for the periodic potential problem," Phys. Rev. 94, 1498-1524 (1954).
-
(1954)
Phys. Rev.
, vol.94
, pp. 1498-1524
-
-
Slater, J.C.1
Koster, G.F.2
-
28
-
-
0016486474
-
Tight-binding calculations of the valence bands of diamond and zincblende crystals
-
D. J. Chadi and M. L. Cohen, "Tight-binding calculations of the valence bands of diamond and zincblende crystals," Phys. Status Solidi B 68, 405-419 (1975).
-
(1975)
Phys. Status Solidi B
, vol.68
, pp. 405-419
-
-
Chadi, D.J.1
Cohen, M.L.2
-
29
-
-
0000141123
-
Atomic densities of states near Si(111) surfaces
-
K. C. Pandey and J. C. Phillips, "Atomic densities of states near Si(111) surfaces," Phys. Rev. B 13, 750-760 (1976).
-
(1976)
Phys. Rev. B
, vol.13
, pp. 750-760
-
-
Pandey, K.C.1
Phillips, J.C.2
-
30
-
-
0000984671
-
Slater-Koster parameterization for Si and the ideal-vacancy calculation
-
D. A. Papaconstantopoulos and E. N. Economou, "Slater-Koster parameterization for Si and the ideal-vacancy calculation," Phys. Rev. B 22, 2903-2907 (1980).
-
(1980)
Phys. Rev. B
, vol.22
, pp. 2903-2907
-
-
Papaconstantopoulos, D.A.1
Economou, E.N.2
-
31
-
-
0001173579
-
Tight-binding calculations for the electronic structure of isolated vacancies and impurities in III-V compound semiconductors
-
D. N. Talwar and C. S. Ting, "Tight-binding calculations for the electronic structure of isolated vacancies and impurities in III-V compound semiconductors," Phys. Rev. B 25, 2660-2680 (1982).
-
(1982)
Phys. Rev. B
, vol.25
, pp. 2660-2680
-
-
Talwar, D.N.1
Ting, C.S.2
-
32
-
-
4243858725
-
New semiempirical construction of the Slater-Koster parameters for group-IV semiconductors
-
Y. Li and P. J. Lin-Chung, "New semiempirical construction of the Slater-Koster parameters for group-IV semiconductors," Phys. Rev. B 27, 3465-3470 (1983).
-
(1983)
Phys. Rev. B
, vol.27
, pp. 3465-3470
-
-
Li, Y.1
Lin-Chung, P.J.2
-
33
-
-
0001482414
-
Unified approach to the electronic structure of strained Si/Ge superlattices
-
C. Tserbak, H. M. Polatoglou, and G. Theodorou, "Unified approach to the electronic structure of strained Si/Ge superlattices," Phys. Rev. B 47, 7104-7124 (1993).
-
(1993)
Phys. Rev. B
, vol.47
, pp. 7104-7124
-
-
Tserbak, C.1
Polatoglou, H.M.2
Theodorou, G.3
-
34
-
-
0000959347
-
Tight-binding model and interaction scaling laws for silicon and germanium
-
G. Grosso and C. Piermarocchi, "Tight-binding model and interaction scaling laws for silicon and germanium," Phys. Rev. B 51, 16772-16777 (1995).
-
(1995)
Phys. Rev. B
, vol.51
, pp. 16772-16777
-
-
Grosso, G.1
Piermarocchi, C.2
-
35
-
-
36149002015
-
Cyclotron resonance of electrons and holes in silicon and germanium crystals
-
G. Dresselhaus, A. F. Kip, and C. Kittel, "Cyclotron resonance of electrons and holes in silicon and germanium crystals," Phys. Rev. 98, 368-384 (1955).
-
(1955)
Phys. Rev.
, vol.98
, pp. 368-384
-
-
Dresselhaus, G.1
Kip, A.F.2
Kittel, C.3
-
36
-
-
36149009836
-
Cyclotron resonance experiments in silicon and germanium
-
R. N. Dexter, H. J. Zeigler, and B. Lax, "Cyclotron resonance experiments in silicon and germanium," Phys. Rev. 104, 637-664 (1956).
-
(1956)
Phys. Rev.
, vol.104
, pp. 637-664
-
-
Dexter, R.N.1
Zeigler, H.J.2
Lax, B.3
-
37
-
-
84894007777
-
-
note
-
sx(111) = 1.131. Increasing it by 15% to 1.301 produces much better curvature parameters and BZ edge band energies.
-
-
-
-
38
-
-
84893992425
-
-
note
-
xy(113) have signs opposite those of the convention of Papaconstantopoulos. The Papaconstantopoulos convention is used in Table 2.
-
-
-
-
39
-
-
4243837723
-
Effect of valenceband anisotropy and nonparabolicity on total scattering rates for holes in nonpolar semiconductors
-
M. Dür, K. Unterrainer, and E. Gornik, "Effect of valenceband anisotropy and nonparabolicity on total scattering rates for holes in nonpolar semiconductors," Phys. Rev. B 49, 13991-13994 (1994).
-
(1994)
Phys. Rev. B
, vol.49
, pp. 13991-13994
-
-
Dür, M.1
Unterrainer, K.2
Gornik, E.3
-
40
-
-
0001738338
-
Statistics and galvanomagnetic effects in germanium and silicon with warped energy surfaces
-
B. Lax and J. G. Mavroides, "Statistics and galvanomagnetic effects in germanium and silicon with warped energy surfaces," Phys. Rev. 100, 1650-1657 (1955).
-
(1955)
Phys. Rev.
, vol.100
, pp. 1650-1657
-
-
Lax, B.1
Mavroides, J.G.2
-
41
-
-
12044255509
-
Ultrafast dynamics of laser-excited electron distributions in silicon
-
J. R. Goldman and J. A. Prybyla, "Ultrafast dynamics of laser-excited electron distributions in silicon," Phys. Rev. Lett. 72, 1364-1367 (1994).
-
(1994)
Phys. Rev. Lett.
, vol.72
, pp. 1364-1367
-
-
Goldman, J.R.1
Prybyla, J.A.2
-
42
-
-
0000707401
-
Ultrafast carrier dynamics near the Si(100)2 × 1 surface
-
S. Jeong and J. Bokor, "Ultrafast carrier dynamics near the Si(100) 2 × 1 surface," Phys. Rev. B 59, 4943-4951 (1999).
-
(1999)
Phys. Rev. B
, vol.59
, pp. 4943-4951
-
-
Jeong, S.1
Bokor, J.2
-
43
-
-
0002463206
-
Measurement of ultrafast hot-carrier relaxation in silicon by thin film enhanced, time-resolved reflectivity
-
F. E. Doany and D. E. Grischkowsky, "Measurement of ultrafast hot-carrier relaxation in silicon by thin film enhanced, time-resolved reflectivity," Appl. Phys. Lett. 52, 36-38 (1988).
-
(1988)
Appl. Phys. Lett.
, vol.52
, pp. 36-38
-
-
Doany, F.E.1
Grischkowsky, D.E.2
-
44
-
-
0025589558
-
Femtosecond studies of plasma formation in crystalline and amorphous silicon
-
Applications of Ultrashort Laser Pulses in Science and Technology, A. Antonetti, ed.
-
W. Kütt, A. Esser, K. Seibert, U. Lemmer, and H. Kurz, "Femtosecond studies of plasma formation in crystalline and amorphous silicon," in Applications of Ultrashort Laser Pulses in Science and Technology, A. Antonetti, ed., Proc. SPIE 1268, 154-165 (1990).
-
(1990)
Proc. SPIE
, vol.1268
, pp. 154-165
-
-
Kütt, W.1
Esser, A.2
Seibert, K.3
Lemmer, U.4
Kurz, H.5
-
45
-
-
0000155523
-
Generation and detection of coherent optical phonons in germanium
-
T. Pfeifer, W. Kütt, H. Kurz, and R. Scholz, "Generation and detection of coherent optical phonons in germanium," Phys. Rev. Lett. 69, 3248-3251 (1992).
-
(1992)
Phys. Rev. Lett.
, vol.69
, pp. 3248-3251
-
-
Pfeifer, T.1
Kütt, W.2
Kurz, H.3
Scholz, R.4
-
46
-
-
0012070886
-
Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared
-
A. J. Sabbah and D. M. Riffe, "Measurement of silicon surface recombination velocity using ultrafast pump-probe reflectivity in the near infrared," J. Appl. Phys. 88, 6954-6956 (2000).
-
(2000)
J. Appl. Phys.
, vol.88
, pp. 6954-6956
-
-
Sabbah, A.J.1
Riffe, D.M.2
-
47
-
-
0029637566
-
Acoustic generation in crystalline silicon with femtosecond optical pulses
-
O. B. Wright and V. E. Gusev, "Acoustic generation in crystalline silicon with femtosecond optical pulses," Appl. Phys. Lett. 66, 1190-1192 (1995).
-
(1995)
Appl. Phys. Lett.
, vol.66
, pp. 1190-1192
-
-
Wright, O.B.1
Gusev, V.E.2
-
48
-
-
0001607935
-
Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements
-
T. Tanaka, A. Harata, and T. Sawada, "Subpicosecond surface-restricted carrier and thermal dynamics by transient reflectivity measurements," J. Appl. Phys. 82, 4033-4038 (1997).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 4033-4038
-
-
Tanaka, T.1
Harata, A.2
Sawada, T.3
|