In-situ Ga2O3 process for GaAs inversion/accumulation device and surface passivation applications

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 383-386

  Passlack, Matthias ^a   Hong, Minghwei ^a   Mannaerts, Joseph P ^a   Chu, S N G ^a   Opila, Robert L ^a   Moriya, Netzer ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; HIGH ENERGY ELECTRON DIFFRACTION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PASSIVATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SURFACES; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE RECOMBINATION VELOCITY; INTERFACE STATE DENSITY; PHOTOCHEMICAL STABILITY;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0029521765     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)