Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Lim, Ji Song ^a   Yang, Xiaodong ^a   Nishida, Toshikazu ^a   Thompson, Scott E ^a  

^a University of Florida   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DEFORMATION; CONDUCTION BAND; HYDROSTATIC DEFORMATION; MECHANICAL STRESS;

ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); SHEAR DEFORMATION; SHEAR STRESS;

MOSFET DEVICES;

EID: 33747479883     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2245373     Document Type: Article

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