High power laser semiconductor interactions: A Monte Carlo study for silicon

Journal of Applied Physics

Volumn 81, Issue 4, 1997, Pages 1807-1812

  Yeom, K ^a   Jiang, H ^a,b   Singh, J ^a  

^a University of Michigan   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRON SCATTERING; ELECTRONS; ENERGY TRANSFER; HIGH POWER LASERS; LASER PULSES; MONTE CARLO METHODS; SEMICONDUCTING SILICON;

CARRIER ENERGY DISTRIBUTION; CONDUCTION BAND; IMPACT IONIZATION; LASER ELECTRON INTERACTIONS;

IONIZATION;

EID: 0031075328     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.364037     Document Type: Article

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