Energy-band structure of strained indirect gap semiconductor: A k. p method

2002 International Conference on Computational Nanoscience and Nanotechnology - ICCN 2002

Volumn , Issue , 2002, Pages 411-414

  Cavassilas, N ^a   Aniel, F ^b   Fishman, G ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

k. p theory; Sige; Strain

Indexed keywords

COMPUTER SIMULATION; DEFORMATION; FUNCTIONS; HAMILTONIANS; SEMICONDUCTOR MATERIALS; SILICON; STRAIN;

CONDUCTION BANDS (CB); K . P THEORY; SIGE; VALENCE BANDS (VB);

BAND STRUCTURE;

EID: 6344261969     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

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