Polysilicon gate etching in high density plasmas. III. X-ray photoelectron spectroscopy investigation of sidewall passivation of silicon trenches using an oxide hard mask

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2493-2499

  Bell, F H ^a   Joubert, O ^b  

^a ORANGE LABS   (France)

^b INSTITUT DES MATÉRIAUX JEAN ROUXEL   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001243436     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588758     Document Type: Article

References (13)

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