Highly selective etching of tantalum electrode to thin gate dielectrics usine SiCI4-NF3 gas mixture plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 4 B, 2004, Pages 1768-1772

  Shimada, Hiroyuki ^a   Maruyama, Koichi ^a  

^a SEIKO EPSON CORPORATION   (Japan)

Author keywords

Deposition; Etching; FD; Fully depleted; Gate dielectric; Metal gate; Midgap; MOSFET; NFS; Selectivity; Sicl4; Silicon on insulator; SOI; Ta; Tan x; Tantalum; Tantalum nitride

Indexed keywords

ANISOTROPY; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CONTAMINATION; GATES (TRANSISTOR); GRAIN BOUNDARIES; INDUCTIVELY COUPLED PLASMA; MOSFET DEVICES; PLASMA ETCHING; SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; TANTALUM COMPOUNDS;

FULLY DEPLETED; GATE DIELECTRIC; METAL GATE; NF3; SELECTIVITY; SICL4; SILICON ON INSULATOR; SOI; TANTALUM NITRIDE; TANX;

DIELECTRIC MATERIALS;

EID: 3142607203     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1768     Document Type: Conference Paper

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