Defect analysis in semiconductor materials based upon p-n junction diode characteristics

Defect and Diffusion Forum

Volumn 261-262, Issue , 2007, Pages 1-24

  Simoen, E ^a   Claeys, C ^a,b   Vanhellemont, J ^c  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c GHENT UNIVERSITY   (Belgium)

Author keywords

Area and perimeter leakage current density; Diffusion current; Generation and recombination lifetime; Generation current; Oxygen precipitation; Silicon and germanium p n junctions

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; LEAKAGE CURRENTS; OXYGEN VACANCIES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR MATERIALS;

DIFFUSION CURRENT; GENERATION CURRENT; GENERATION LIFETIME; LEAKAGE CURRENT DENSITY; RECOMBINATION LIFETIME;

CRYSTAL DEFECTS;

EID: 34147105357     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/ddf.261-262.1     Document Type: Review

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