Defect analysis of strained silicon on thin strain-relaxed buffer layers for high mobility transistors

Journal of Physics Condensed Matter

Volumn 17, Issue 22, 2005, Pages

  Eneman, G ^a,b,d   Simoen, E ^a   Delhougne, R ^a,b   Gaubas, E ^c   Simons, V ^a   Roussel, P ^a   Verheyen, P ^a   Lauwers, A ^a   Loo, R ^a   Vandervorst, W ^a,b   De Meyer, K ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c VILNIUS UNIVERSITY   (Lithuania)

^d FUND FOR SCIENTIFIC RESEARCH   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BUFFER STORAGE; CAPACITANCE; DEFECTS; ELECTRIC POTENTIAL; ELECTROMAGNETIC WAVE ABSORPTION; EPITAXIAL GROWTH; MICROWAVES; RELAXATION PROCESSES; SEMICONDUCTING SILICON; THIN FILMS;

BUFFER LAYERS; ELECTRICAL ACTIVITY; EPITAXIAL LAYERS; STRAINED SILICON (SSI);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 21044446385     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/22/007     Document Type: Article

References (30)

1. Takagi S et al 2003 IEDM Tech. Dig. 03-57
2. Trinkaus H, Holländer B, Rongen St, Mantl S, Herzog H-J, Kuchenbecker J and Hackbarth T 2000 Appl. Phys. Lett. 76 3552
3. Luysberg M, Kirch D, Trinkaus H, Holländer B, Lenk St, Mantl S, Herzog H-J, Hackbarth T and Fichtner P F P 2002 J. Appl. Phys. 92 4290
4. Sawano K, Hirose Y, Ozawa Y, Koh S, Yamanaka J, Nakagawa K, Hattori T and Shiraki Y 2003 Japan. J. Appl. Phys. 42 L735
5. Cai J, Mooney P M, Christiansen S H, Chen H, Chu J O and Ott J A 2004 J. Appl. Phys. 95 5347
6. Bolkhovityanov Yu B, Deryabin A S, Gutakovskii A K, Revenko M A and Sokolov L V 2004 Appl. Phys. Lett. 84 4599
7. Delhougne R, Meunier-Beillard P, Caymax M, Loo R and Vandervorst W 2004 Proc. ISTDM 2003 Appl. Surf. Sci. 224 91
8. Wang H C-H et al 2003 IEDM Tech. Dig. 03-61
9. Fiorenza J G et al 2004 Semicond. Sci. Technol. 19 L4
10. Eneman G et al 2004 MRS Proc. 809 187
11. Poyai A, Simoen E, Claeys C and Rooyackers R 2003 J. Electrochem. Soc. 150 G795
12. Rasras M S, De Wolf I, Groeseneken G and Maes H E 2001 J. Appl. Phys. 89 249
13. Gaubas E, Simoen E, Claeys C and Vanhellemont J 2001 Mater. Sci. Semicond. Process. 4 125
14. Chynoweth A G and McKay K G 1957 Phys. Rev. 106 418
15. Chynoweth A G and Pearson G L 1958 J. Appl. Phys. 29 1103
16. Murakami Y and Shingyouchi T 1994 J. Appl. Phys. 75 3548
17. Poyai A, Simoen E, Claeys C, Gaubas E, Gräf D and Huber A 2003 Mater. Sci. Eng. B 102 189
18. Giovane L M, Luan H-C, Agarwal A M and Kimerling L C 2001 Appl. Phys. Lett. 78 541
19. Brotherton S D, Ayres J R, Clegg J B and Gowers J P 1988 J. Electron. Mater. 18 173
20. Ayres J R, Brotherton S D, Clegg J B, Gill A and Gowers J P 1989 Semicond. Sci. Technol. 4 339
21. Sugii N, Irieda S, Morioka J and Inada T 2004 J. Appl. Phys. 96 261
22. Cowern N E B, Zalm P C, van der Sluis P, Gravesteijn D J and de Boer W B 1994 Phys. Rev. Lett. 72 2582
23. Rücker H, Heinemann B, Röpke W, Kurps R, Krüger D, Lippert G and Osten H J 1998 Appl. Phys. Lett. 73 1682
24. Watanabe J, Goto K and Nakamura T 1997 Appl. Phys. Lett. 70 387
25. Chynoweth A G and McKay K G 1956 Phys. Rev. 102 369
26. Yuan X L, Sekiguchi T, Ri S G and Ito S 2004 Appl. Phys. Lett. 84 3316
27. Yamaguchi M and Amano C 1985 J. Appl. Phys. 58 3601
28. Yamaguchi M, Amano C and Itoh Y 1989 J. Appl. Phys. 66 915
29. Andre C L, Boeckl J J, Wilt D M, Pitera A J, Lee M L, Fitzgerald E A, Keyes B M and Ringel S A 2004 Appl. Phys. Lett. 84 3447
30. Mataré H F 1971 Defect Electronics in Semiconductors (New York: Wiley-Interscience) chapter 8.1