Gated-Diode Study of Corner and Peripheral Leakage Current in High-Energy Neutron Irradiated Silicon P-N Junctions

IEEE Transactions on Nuclear Science

Volumn 50, Issue 2, 2003, Pages 278-287

  Czerwinski, A ^a   Simoen, E ^b   Poyai, A ^b   Claeys, C ^b   Ohyama, H ^c  

^a Research Group of Integrated Circuits and System Design   (Poland)

^b IMEC   (Belgium)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

Author keywords

High energy neutron irradiations; junction corner effects; p n junction leakage; silicon diodes; silicon substrate hardening

Indexed keywords

EID: 85008028685     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.2003.809469     Document Type: Article

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