Selective epitaxial deposition of strained silicon: A simple and effective method for fabricating high performance MOSFET devices

Solid-State Electronics

Volumn 48, Issue 8, 2004, Pages 1307-1316

  Delhougne, R ^a,b   Eneman, G ^a,b,d   Caymax, M ^a   Loo, R ^a   Meunier Beillard, P ^c   Verheyen, P ^a   Vandervorst, W ^a,b   De Meyer, K ^a,b   Heyns, M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c PHILIPS RESEARCH LABORATORIES   (Netherlands)

^d Scientific Research   (Belgium)

Author keywords

Carbon; Chemical vapor deposition; nMOS devices; Selective growth; SiGe; Strain relaxed buffer; Strained silicon

Indexed keywords

ANNEALING; CARBON; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DIFFUSION; EPITAXIAL GROWTH; ETCHING; HEATING; LATTICE CONSTANTS; LITHOGRAPHY; MICROMETERS; MOSFET DEVICES; OPTIMIZATION; STRAIN; THERMAL CONDUCTIVITY;

NMOS DEVICES; SELECTIVE GROWTH; SIGE; STRAIN RELAXED BUFFERS; STRAINED SILICON;

SEMICONDUCTING SILICON;

EID: 2342630606     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.02.012     Document Type: Article

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