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Volumn 46, Issue 7, 1999, Pages 1487-1488

On the impact of the capture rates on the generation/recombination lifetime ratio of a single deep level

Author keywords

[No Author keywords available]

Indexed keywords

CAPTURE RATE RATIO;

EID: 0032633882     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.772495     Document Type: Article
Times cited : (25)

References (11)
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    • Shockley, W.1    Read Jr., W.T.2
  • 4
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    • D. K. Schroder, "The concept of generation and recombination lifetimes in semiconductors," IEEE Trans. Electron Devices, vol. ED-29, pp. 1336-1338, Aug. 1982.
    • (1982) IEEE Trans. Electron Devices , vol.ED-29 , pp. 1336-1338
    • Schroder, D.K.1
  • 5
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    • Nov.
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  • 6
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    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , pp. 89-97
    • Simoen, E.1    Claeys, C.2    Ohyama, H.3
  • 7
    • 36449005856 scopus 로고
    • Separation and analysis of diffusion and generation components of pn junction leakage current in various silicon wafers
    • Apr.
    • Y. Murakami and T. Shingyouji, "Separation and analysis of diffusion and generation components of pn junction leakage current in various silicon wafers," J. Appl. Phys., vol. 75, pp. 3548-3552, Apr. 1994.
    • (1994) J. Appl. Phys. , vol.75 , pp. 3548-3552
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  • 8
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  • 9
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    • E. Simoen, C. Claeys, A. Czerwinski, and J. Katcki, "Accurate extraction of the diffusion current in silicon p-n junction diodes," Appl. Phys. Lett., vol. 72, pp. 1054-1056, Mar. 1998.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.