On the electrical activity of misfit and threading dislocations in p-n junctions fabricated in thin strain-relaxed buffer layers

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 285-290

  Simoen, E ^a   Eneman, G ^a,b   Shamuilia, S ^a   Simons, V ^a   Gaubas, E ^c   Delhougne, R ^a   Loo, R ^a   De Meyer, K ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Carrier lifetime; Current voltage characteristics; Leakage current; P n junction; Strain relaxed buffer layers; Strained silicon; Threading and misfit dislocations

Indexed keywords

BUFFER LAYERS; CARRIER LIFETIME; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; LEAKAGE CURRENTS; SEMICONDUCTOR DEVICE MANUFACTURE; SI-GE ALLOYS; STRAIN RELAXATION; STRAINED SILICON;

ELECTRICAL ACTIVITIES; EMISSION MICROSCOPY; METALLURGICAL JUNCTIONS; MISFIT AND THREADING DISLOCATIONS; P-N JUNCTION; PN JUNCTION DIODES; STRAIN-RELAXED BUFFER LAYERS; THREADING DISLOCATION;

SEMICONDUCTOR JUNCTIONS;

EID: 36048961445     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.285     Document Type: Conference Paper

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