Analysis of the leakage current origin in thin strain relaxed buffer substrates

Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

  Eneman, G ^a,c,d   Simoen, E ^a,b   Delhougne, R ^a,e   Verheyen, P ^a   Simons, V ^a   Loo, R ^a   Caymax, M ^a,b   Claeys, C ^a,b,c   Vandervorst, W ^a,c   De Meyer, K ^a,c  

^a IMEC   (Belgium)

^b ELECTROCHEMICAL SOCIETY

^c UNIVERSITY OF LEUVEN   (Belgium)

^d FUND FOR SCIENTIFIC RESEARCH   (Belgium)

^e CMOS Device Research Group   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON-INDUCED DEFECTS; DEPLETION REGION; IMPLANTATION DAMAGE; JUNCTION LEAKAGE;

DEFECTS; RELAXATION PROCESSES; SEMICONDUCTOR JUNCTIONS; STRAIN; SUBSTRATES;

LEAKAGE CURRENTS;

EID: 33645670128     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2178587     Document Type: Article

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