Defect removal, dopant diffusion and activation issues in ion-implanted shallow junctions fabricated in crystalline germanium substrates

Solid State Phenomena

Volumn 108-109, Issue , 2005, Pages 691-696

  Simoen, E ^a   Satta, A ^a   Meuris, M ^a   Janssens, T ^a   Clarysse, T ^a   Benedetti, A ^a   Demeurisse, C ^a   Brijs, B ^a   Hoflijk, I ^a   Vandervorst, W ^a,b   Claeys, C ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Defect removal; Dopant activation and diffusion; Germanium; Ion implantation

Indexed keywords

DEFECTS; DIFFUSION; GERMANIUM; ION IMPLANTATION; RAPID THERMAL ANNEALING; SEMICONDUCTOR JUNCTIONS; SILICA; SUBSTRATES;

CRYSTALLINE GERMANIUM; DEEP SUBMICRON CMOS; DOPANT ACTIVATION; DOPANT DIFFUSION; ENHANCED DIFFUSION; EXTENDED DEFECT; GERMANIUM SUBSTRATES; SHALLOW JUNCTION;

CHEMICAL ACTIVATION;

EID: 33845229624     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.108-109.691     Document Type: Conference Paper

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