Electrical and structural properties of oxygen-precipitation induced extended defects in silicon

Journal de Physique III

Volumn 7, Issue 7, 1997, Pages 1469-1486

  Claeys, C ^a   Simoen, E ^a   Vanhellemont, J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTRON BEAMS; OXYGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY;

CARRIER RECOMBINATION; ELECTRON BEAM INDUCED CURRENTS (EBIC); EXTENDED DEFECTS; LOW FREQUENCY NOISE SPECTROSCOPY;

SEMICONDUCTING SILICON;

EID: 0031193144     PISSN: 11554320     EISSN: None     Source Type: Journal    
DOI: 10.1051/jp3:1997200     Document Type: Article

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