Excess carrier cross-sectional profiling technique for determination of the surface recombination velocity

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 125-131

  Gaubas, E ^a   Vaitkus, J ^a   Simoen, E ^b   Claeys, C ^b   Vanhellemont, J ^b  

^a VILNIUS UNIVERSITY   (Lithuania)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BOUNDARY CONDITIONS; CARRIER CONCENTRATION; COMPUTER SIMULATION; CORRELATION METHODS; INFRARED SPECTROSCOPY; LIGHT ABSORPTION; MATHEMATICAL MODELS; MICROWAVES; SUBSTRATES;

CARRIER CROSS-SECTIONAL PROFILING METHODS;

SILICON WAFERS;

EID: 0035247527     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00140-2     Document Type: Article

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