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Volumn 84, Issue 23, 2004, Pages 4599-4601

Enhanced strain relaxation in a two-step process of GexSi 1-x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; DEFECTS; DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MONOCHROMATORS; SEMICONDUCTOR GROWTH; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

EID: 3042545391     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1734683     Document Type: Article
Times cited : (11)

References (14)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.