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Volumn 84, Issue 23, 2004, Pages 4599-4601
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Enhanced strain relaxation in a two-step process of GexSi 1-x/Si(001) heterostructures grown by low-temperature molecular-beam epitaxy
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHIZATION;
DEFECTS;
DISLOCATIONS (CRYSTALS);
HETEROJUNCTIONS;
ION IMPLANTATION;
MOLECULAR BEAM EPITAXY;
MONOCHROMATORS;
SEMICONDUCTOR GROWTH;
STRAIN;
TRANSMISSION ELECTRON MICROSCOPY;
ELASTIC DEFORMATION;
ELASTIC STRAINS;
PLASTIC RELAXATION;
GERMANIUM COMPOUNDS;
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EID: 3042545391
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1734683 Document Type: Article |
Times cited : (11)
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References (14)
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