1/f noise as a tool to assess Fermi level pinning (EF) at the HfO2/ poly-Si and FUSI interface in high-κ n-MOSFETs

ECS Transactions

Volumn 2, Issue 2, 2006, Pages 503-513

  Srinivasan, P ^a,b   Simoen, E ^a   Pantisano, L ^a   Claeys, C ^a,c   Misra, D ^b  

^a IMEC   (Belgium)

^b NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL CARRIERS; FERMI LEVEL PINNING; GATE VOLTAGES; MOBILITY DEGRADATION; NUMBER FLUCTUATIONS THEORY;

ELECTRIC POTENTIAL; FERMI LEVEL; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); MONOLAYERS; MOSFET DEVICES; POLYSILICON;

ACOUSTIC NOISE;

EID: 33745464859     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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