P-n junction peripheral current analysis using gated diode measurements

Applied Physics Letters

Volumn 72, Issue 26, 1998, Pages 3503-3505

  Czerwinski, A ^a   Simoen, E ^b   Claeys, C ^b  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001421003     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121641     Document Type: Article

References (20)

1. J. Vanhellemont, E. Simoen, A. Kaniava, M. Libezny, and C. Claeys, J. Appl. Phys. 77, 5669 (1995).
2. J. Vanhellemont, E. Simoen, and C. Claeys, Appl. Phys. Lett. 66, 2894 (1995).
3. E. Simoen, C. Claeys, A. Czerwinski, and J. Katcki, Appl. Phys. Lett. 72, 1054 (1998).
4. A. Czerwinski, D. Tomaszewski, J. Gibki, A. Bakowski, K. Klima, J. Katcki, E. Simoen, and C. Claeys, in Proceedings of the ECS Symposium on "Crystalline Defects and Contamination Control," edited by B. O. Kolbesen, C. Claeys, P. Stallhofer, and F. Tardiff (The Electrochemical Society, Pennington, NJ, 1997), Vol. 97-22, p. 218.
5. Y. Murakami, H. Abe, and T. Shingyouji, Jpn. J. Appl. Phys., Part 1 34, 1477 (1995).
6. E. Simoen, A. Poyai, C. Claeys, A. Czerwinski, and J. Katcki, in Proceedings of Semiconductor Silicon, edited by H. R. Huff, V. Gösele, and H. Tsuya (The Electrochemical Society, Pennington, NJ, 1998), Vol. 98-1, p. 157.
7. Y. Murakami and T. Shingyouji, J. Appl. Phys. 75, 3548 (1994).
8. A. Czerwinski, E. Simoen, J. Vanhellemont, D. Tomaszewski, J. Gibki, and A. Bakowski, in Solid State Phenomena, Proceedings of GADEST '97, edited by C. Claeys, J. Vanhellemont, H. Richter, and M. Kittler (Scitec, Switzerland, 1997), Vol. 57-58, p. 477.
9. J. P. Dubuc, E. Simoen, P. Vasina, and C. Claeys, Electron. Lett. 31, 1016 (1995).
10. E. Simoen, J. Vanhellemont, and C. Claeys, Physica B 228, 219 (1996).
11. A. S. Grove and D. J. Fizgerald, Solid-State Electron. 9, 783 (1966).
12. P. C. T. Roberts and J. D. E. Beynon, Solid-State Electron. 16, 221 (1973).
13. G. A. Hawkins, E. A. Trabka, R. L. Nielsen, and B. C. Burkey, IEEE Trans. Electron Devices 32, 1806 (1985).
14. G. A. Hawkins, Solid-State Electron. 28, 945 (1985).
15. J.-C. Marchetaux, B. S. Doyle, and A. Boudou, Solid-State Electron. 30, 745 (1987).
16. H. Aharoni, T. Ohmi, M. M. Oka, A. Nakada, and Y. Tamai, J. Appl. Phys. 81, 1270 (1997).
17. D. K. Schroder, IEEE Trans. Electron Devices 44, 160 (1997).
18. A. B. Sproul and M. A. Green, J. Appl. Phys. 73, 1214 (1993).
19. C. T. Wang, Solid-State Electron. 20, 967 (1977).
20. N. S. Saks, IEEE Electron Device Lett. 1, 131 (1980).