Plasma hydrogenation of strain-relaxed SiGeSi heterostructure for layer transfer

Applied Physics Letters

Volumn 85, Issue 21, 2004, Pages 4944-4946

  Chen, Peng ^{a,b,c,d,e,f,g}   Chu, Paul K ^{a,b,c,d,e,f,g}   Hochbauer T ^b,c,d,e,f,g   Nastasi, M ^b,c,d,e,f,g   Buca, D ^c,d,e,f,g   Mantl, S ^c,d,e,f,g   Theodore, N David ^d,e,f,g   Alford, T L ^e,f,g   Mayer, J W ^e,f,g   Loo, R ^f,g   Caymax, M ^f,g   Cai, M ^g   Lau, S S ^g  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

^c FORSCHUNGSZENTRUM JÜLICH   (Germany)

^d FREESCALE SEMICONDUCTOR INC   (United States)

^e Arizona State University   (United States)

^f IMEC   (Belgium)

^g UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; HYDROGENATION; INTERFACES (MATERIALS); ION IMPLANTATION; MICROCRACKS; PLASMA APPLICATIONS; RELAXATION PROCESSES; SEMICONDUCTING SILICON COMPOUNDS; SILICON ON INSULATOR TECHNOLOGY; STRAIN;

INTERDIFFUSION; LAYER TRANSFER; PLASMA HYDROGENATION; STRAIN RELAXATION;

HETEROJUNCTIONS;

EID: 21044440249     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1824171     Document Type: Article

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