MOSFETs with Recessed SiGe Source/Drain Jnctions Formed by Selective Etching and Growth

Electrochemical and Solid-State Letters

Volumn 7, Issue 4, 2004, Pages

  Isheden, C ^a   Hellstrom P E ^a   Radamson, H H ^a   Zhang, S L ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CONCENTRATION (PROCESS); ELECTRIC CONDUCTIVITY; ETCHING; EVAPORATION; POLYCRYSTALLINE MATERIALS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; TRANSMISSION ELECTRON MICROSCOPY;

ENERGY IMPLANTATION; SELECTIVE GROWTH;

MOSFET DEVICES;

EID: 1842582455     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1646833     Document Type: Article

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