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Volumn 47-48, Issue , 1996, Pages 229-234
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Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments
a b c a,d a d a b a |
Author keywords
[No Author keywords available]
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Indexed keywords
CARRIER LIFETIME;
LIGHT SCATTERING;
OXYGEN;
PRECIPITATION (CHEMICAL);
SEMICONDUCTOR DEVICE MANUFACTURE;
SILICON;
CARRIER LIFETIME MEASUREMENTS;
INFRARED TECHNIQUE;
INTERSTITIAL OXYGEN;
LIGHT-INDUCED ABSORPTION;
OXYGEN PRECIPITATES;
OXYGEN PRECIPITATION;
STRONG DEPENDENCES;
THERMAL PRE-TREATMENT;
FOURIER TRANSFORM INFRARED SPECTROSCOPY;
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EID: 17544372970
PISSN: 10120394
EISSN: None
Source Type: Book Series
DOI: None Document Type: Article |
Times cited : (5)
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References (14)
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