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Volumn 47-48, Issue , 1996, Pages 229-234

Infrared studies of oxygen precipitation related defects in silicon after various thermal treatments

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LIFETIME; LIGHT SCATTERING; OXYGEN; PRECIPITATION (CHEMICAL); SEMICONDUCTOR DEVICE MANUFACTURE; SILICON;

EID: 17544372970     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (5)

References (14)
  • 1
    • 0001673843 scopus 로고
    • Oxygen in Silicon
    • eds T.S Moss and S. Mahajan Elsevier, New York
    • H. Bender and J. Vanhellemont, "Oxygen in Silicon", in Handbook on Semiconductors, eds T.S Moss and S. Mahajan (Elsevier, New York, 1994), Vol. 3, pp. 1637-1753.
    • (1994) Handbook on Semiconductors , vol.3 , pp. 1637-1753
    • Bender, H.1    Vanhellemont, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.