Study of oxygen related recombination defects in Si by temperature-dependent lifetime and EBIC measurements

Solid State Phenomena

Volumn 57-58, Issue , 1997, Pages 155-160

  Gaubas, E ^a   Vanhellemont, J ^b,c   Simoen, E ^b   Claeys, C ^b   Seifert, W ^d  

^a VILNIUS UNIVERSITY   (Lithuania)

^b IMEC   (Belgium)

^c Institute for Semiconductor Physics ^*  (Germany)

^d IHP   (Germany)

Author keywords

Absorption; Carrier Lifetime; DLTS; EBIC; Microwave; Oxygen Related Defects

Indexed keywords

ABSORPTION; ACTIVATION ENERGY; CHARGE CARRIERS; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; MICROWAVES; OXYGEN; THERMAL EFFECTS; DEFECTS; SEMICONDUCTOR DEVICE MANUFACTURE;

CARRIER LIFETIME; ELECTRON BEAM INDUCED CURRENT (EBIC); OXYGEN DEFECTS; RECOMBINATION ACTIVITY;

SEMICONDUCTING SILICON; CARRIER LIFETIME;

CARRIER RECOMBINATION; CORRELATION BETWEEN PARAMETERS; EBIC; OXYGEN-RELATED DEFECTS; RECOMBINATION DEFECTS; TEMPERATURE DEPENDENCIES; TEMPERATURE- DEPENDENT LIFETIMES; TRANSIENT MEASUREMENT;

EID: 16944367394     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/ssp.57-58.155     Document Type: Article

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