Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

Materials Science and Engineering B

Volumn 36, Issue 1-3, 1996, Pages 225-229

  Kissinger, G ^a   Vanhellemont, J ^b   Simoen, E ^b   Claeys, C ^b   Richter, H ^a  

^a Institute of Semiconductor Physics   (Germany)

^b IMEC   (Belgium)

Author keywords

Crystal defects; Infrared light scattering tomography; Silicon oxide precipitates; Silicon wafers

Indexed keywords

EID: 0041536552     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/0921-5107(95)01371-7     Document Type: Article

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