Are we there yet? - A metamorphic HEMT and HBT perspective

GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium

Volumn 2005, Issue , 2005, Pages 13-20

  Ng, Geok Ing ^a   Radhakrishnan, K ^a   Wang, Hong ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COST EFFECTIVENESS; ELECTRONIC COMMERCE; EPITAXIAL GROWTH; HETEROJUNCTION BIPOLAR TRANSISTORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICES; SUBSTRATES;

COMMERCIALIZATION; METAMORPHIC EPITAXY; METAMORPHIC HEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33847309741     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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