70 nm low-noise metamorphic HEMT technology of 4 inch GaAs wafers

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 215-218

  Leuther, Arnulf ^a   Tessmann, Axel ^a   Dammann, Michael ^a   Reinert, Werner ^a   Schlechtweg, Michael ^a   Mikulla, Michael ^a   Walther, Martin ^a   Weimann, Günter ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; AMPLIFIERS (ELECTRONIC); ELECTRIC BREAKDOWN; ELECTRIC POTENTIAL; GAIN MEASUREMENT; GATES (TRANSISTOR); MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SIGNAL NOISE MEASUREMENT; SILICON WAFERS; SPURIOUS SIGNAL NOISE; CHEMICAL ACTIVATION; CUTOFF FREQUENCY; DEGRADATION; ELECTRONS; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; LOW NOISE AMPLIFIERS; NETWORKS (CIRCUITS); NOISE FIGURE;

CUT OFF FREQUENCY; GALLIUM ARSENIDE WAFERS; HOT ELECTRON EFFECTS; LOW NOISE AMPLIFIERS; LOW NOISE TRANSISTOR; METAMORPHIC TRANSISTOR; ON STATE BREAKDOWN VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

GAIN; HEMT TECHNOLOGIES; HEMTS; HOT ELECTRON EFFECTS; MEDIAN TIME TO FAILURES; MHEMTS; ON-STATE BREAKDOWN; SMALL SIGNAL GAIN;

EID: 0038149436     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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