Metamorphic AlSb/InAs HEMT for low-power, high-speed electronics

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2003, Pages 294-297

  Tsai, R ^a   Barsky, M ^a   Boos, J B ^b   Bennett, B R ^b   Lee, J ^a   Papanicolaou, N A ^b   Magno, R ^b   Namba, C ^a   Liu, P H ^a   Park, D ^b   Grundbacher, R ^a   Gutierrez, A ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON MOBILITY; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; TRANSCONDUCTANCE;

GATE LEAKAGE; GATE VOLTAGE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0346305079     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/gaas.2003.1252415     Document Type: Conference Paper

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