Two-stage broadband high-gain W-band amplifier using 0.1-μm metamorphic HEMT technology

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 766-768

  Lee, Bok Hyung ^a   An, Dan ^a   Lee, Mun Kyo ^a   Lim, Byeong Ok ^a   Kim, Sam Dong ^a   Rhee, Jin Koo ^a  

^a Millimtr wave Inov Tech Res Ctr   (South Korea)

Author keywords

0.1 m metamorphic high electron mobility transistor (MHEMT); Broadband amplifier; W band

Indexed keywords

BROADBAND AMPLIFIERS; CURRENT VOLTAGE CHARACTERISTICS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; TRANSCONDUCTANCE;

MAXIMUM OSCILLATION FREQUENCY; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 10644284905     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838506     Document Type: Article

References (7)

1. D. L. Ingram, Y. C. Chen, J. Kraus, B. Brunner, B. Allen, H. C. Yen, and K. F. Lau, "A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier," in Proc. RFICS, 1999, pp. 95-98.
2. M. Yu, M. Matloubian, P. Petre, L. R. Hamilton, R. Bowen, M. Lui, H.-C. Sun, C. M. Ngo, P. Janke, D. W. Baker, and R. S. Robertson, "W-band InP HEMT MMICs using finite-grand waveguide (FGCPW) design," IEEE J. Solid-State Circuits, vol. 34, pp. 1212-1218, Sept. 1999.
3. A. Tessmann, W. H. Haydl, M. Neumann, and J. Rudiger, "W-band cascode amplifier modules for passive imaging applications," IEEE Microwave Guided Wave Lett., vol. 10, pp. 189-191, May 2000.
4. B.-H. Lee, S.-D. Kim, and J.-K. Rhee, "Small-signal analysis of high maximum frequency of oscillation 0.1-μm off-set Γ-shaped gate InGaAs-InAlAs-GaAs metamorphic high-electron-mobility transistors," Jpn. J. Appl. Phys., vol. 43, pp. 1914-1918, 2004.
5. K. C. Hwang, P. C. Chao, C. Creamer, K. B. Nichols, S. Wang, D. Tu, W. Kong, D. Dugas, and G. patton, "Very high gain millimeter-wave InAlAs/InGaAs metamorphic HEMTs," IEEE Electron Device Lett., vol. 20, pp. 551-553, Nov. 1999.
6. K. J. Herrick, S. M. Lardizabal, P. F. Marsh, and C. S. Whelan, "95 GHz metamorphic HEMT power amplifiers on GaAs," IEEE MTT-S Tech. Dig. pp. 137-140, 2003.
7. A. Tessmann, A. Leuther, C. Schwoerer, H. Massler, S. Kudszus, W. Reinert, and M. Schlechtweg, "A coplanar 94 GHz low-noise amplifier MMIC using 0.07 μm metamorphic cascode HEMTs," IEEE MTT-S Tech. Dig., pp. 1581-1584, 2003.