An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

IEEE Microwave and Wireless Components Letters

Volumn 14, Issue 4, 2004, Pages 156-158

  Hacker, Jonathan B ^a   Bergman, Joshua ^a   Nagy, Gabor ^a   Sullivan, Gerard ^a   Kadow, Christoph ^b   Lin, Heng Kuang ^b   Gossard, A C ^b   Rodwell, Mark ^b   Brar, Berinder ^a  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b University of California   (United States)

Author keywords

Antimonide based compound semiconductor (ABCS) HEMT; InAs AlSb HFET; Low noise amplifier; Millimeter waves

Indexed keywords

ENERGY DISSIPATION; GAIN MEASUREMENT; HIGH ELECTRON MOBILITY TRANSISTORS; MILLIMETER WAVES; MOBILE TELECOMMUNICATION SYSTEMS; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SPURIOUS SIGNAL NOISE;

ANTIMONOIDE-BASED COMPOUND SEMICONDUCTOR (ABCS) MEMT; ELECTRON TRANSFER EFFICIENCY; INAS/ALSB HEMT; LOW NOISE AMPLIFIERS;

POWER AMPLIFIERS;

EID: 2442603734     PISSN: 15311309     EISSN: None     Source Type: Journal    
DOI: 10.1109/LMWC.2004.827132     Document Type: Article

References (8)

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