High breakdown voltage InAlGaAs/In0.32Ga0.68As Metamorphic HEMT for microwave and mm-wave power applications

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1999, Pages 1187-1190

  Whelan, C S ^a   Hoke, W E ^a   McTaggart, R A ^a   Lyman, P S ^a   Marsh, P F ^a   Leoni III, R E ^a   Lichwala, S J ^a   Kazior, T E ^a  

^a Advanced Device Center   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH BREAKDOWN VOLTAGE; METAMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

ELECTRIC POTENTIAL; ENERGY GAP; GAIN MEASUREMENT; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033363810     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. M. Chertouk, H. Heiss, D. Xu, S. Kraus, W. Klein, G. Bohm, G. Trankle and G. Weimann, IEEE Electron Device Lett., vol. 17, no. 6, pp. 273-275, 1996.
2. D. Gill, B. Kane, S. Svensson, D. Tu, P. Uppal and N. Byer, IEEE Electron Device Lett., vol. 17, no. 7, pp. 228-230, 1996.
3. M. Zaknoune, B. Bonté, C. Gaquiere, Y. Cordier, Y. Druelle, D. Theron and Y. Crosnier, IEEE Electron Device Lett., vol. 19, no, 9, pp. 345-347, 1998.
4. W. E. Hoke, P. J. Lemonias, J. J. Mosca, P. S. Lyman. A. Torabi, P. F. Marsh, R. A. McTaggart, S. M. Lardizabai and K. Hetzler, accepted J. Vac. Sci. & Tech. B, 1999.
5. T. Broekaert and C. Fonstad, IEEE Transactions on Electron Devices, vol. 39, no. 3, pp. 533-536, 1992.
6. Y. K. Chen, D. C. Radulescu, G. W. Wang, F. E. Najjar and L. F. Eastman, IEEE Electron Device Lett, vol. 9, no. I.January 1988.