Single ended to differential MHEMT transimpedance amplifier with 66 Db-Ω differential transimpedance and 50 GHz bandwidth

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2003, Pages 1193-1196

  Roux, P ^a   Baeyens, Y ^a   Houtsma, V ^a   Leven, A ^a   Weiner, J ^a   Benz, A ^b   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; FREQUENCIES; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; SPURIOUS SIGNAL NOISE;

TRANSIMPEDANCE AMPLIFIERS (TIA);

BROADBAND AMPLIFIERS;

EID: 0043094007     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. M. Reinhold, C. Dorschky, E. Rose, R. Pullela, P. Mayer, F. Kunz, Y. Baeyens, T. Link, J.P. Mattia, "A Fully Integrated 40-Gb/s Clock and Data Recovery IC With 1:4 DEMUX in SiGe Technology", IEEE Journal of Solid-State Circuits, Vol. 36, No. 12, pp. 1937-1945, December 2001
2. J. S. Weiner, A. Leven, V. Houtsma, Y. Baeyens, Y.K. Chen, and P. Paschke, "SiGe differential transimpedance amplifier with 50 GHz bandwidth" 2002 IEEE GaAs IC Digest, pp. 67-69, Monterey, Oct. 2002.
3. D. Streit et. al, "InP and GaAs Components for 40 Gb/s Applications", 2001 GaAs IC Symp. Dig., pp247 - 250.
4. C.F. Campbell, M.S. Heins, M. Y. Kao, M.E. Muir and J.M Caroll, "A 0.15-μm GaAs MHEMT Transimpedance Amplifier IC for 40 Gb/s Applications," 2002 IEEE MTT-S, vol., pp. 79-4682, 2002.
5. M. Sato et al. "1.4 THz Gain Bandwidth product InPHEMT preamplifier using an improved Cherry-Hooper topology", 2002 IEEE GaAs IC Digest, pp. 167-170, Monterey, Oct. 2002