Low-noise metamorphic HEMTs with reflowed 0.1-μm T-gate

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 348-350

  Lien, Y C ^a   Chang, Edward Yi ^a   Chang, H C ^a   Chu, L H ^a   Huang, G W ^b   Lee, H M ^a   Lee, C S ^a   Chen, S H ^a   Shen, P T ^a   Chang, C Y ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Cutoff frequency; E beam; Gate length; Maximum frequency; Metamorphic high electron mobility transistors (MHEMTs); Noise figure (NF); T gate; Thermally reflow

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; FREQUENCIES; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE;

GATE LENGTH; THERMALLY REFLOW;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 3042585773     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.829027     Document Type: Letter

References (12)

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