AlInAs/GaInAs metamorphic HEMT's on GaAs substrate: from material to device

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1998, Pages 211-214

  Cordier, Y ^a   Bollaert, S ^a   Zaknoune, M ^a   diPersio, J ^a   Ferre, D ^a  

^a Inst d'Electronique et de   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; OPTOELECTRONIC DEVICES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SUBSTRATES;

LATTICE MISMATCHED SUBSTRATES; METAMORPHIC BUFFER LAYERS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032296870     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)