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Volumn , Issue , 2001, Pages 192-195

0.06μm gate length metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs with high fT and fMAX

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTRON BEAM LITHOGRAPHY; EQUIVALENT CIRCUITS; GATES (TRANSISTOR); SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TRANSCONDUCTANCE;

EID: 0034842141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (13)

References (10)
  • 1
    • 0033716503 scopus 로고    scopus 로고
    • GaAs metamorphic HEMT (MHEMT): An attractive alternative to InP HEMTs for high performance low noise and power applications
    • (2000) IPRM 2000 , pp. 337-340
    • Whelan, C.S.1
  • 2
    • 0033727530 scopus 로고    scopus 로고
    • The indium content in metamorphic InxAll-xAs/InxGal-xAs HEMTS on GaAs substrate: A new structure parameter
    • (2000) Solid State Electronics , vol.44 , pp. 1021-1027
    • Bollaert, S.1
  • 8
    • 0033706260 scopus 로고    scopus 로고
    • Charge control and electron transport properties in InyAll-yAs/InxGal-xAs metamorphic HEMTs: Effect of indium content
    • (2000) IPRM 2000 , pp. 102-105
    • Cordier, Y.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.