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Volumn , Issue , 2001, Pages 192-195
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0.06μm gate length metamorphic In0.52Al0.48As/In0.53Ga0.47As HEMTs on GaAs with high fT and fMAX
a a a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRON BEAM LITHOGRAPHY;
EQUIVALENT CIRCUITS;
GATES (TRANSISTOR);
SEMICONDUCTING INDIUM COMPOUNDS;
SUBSTRATES;
TRANSCONDUCTANCE;
EXTRINSIC TRANSCONDUCTANCE;
HIGH ELECTRON MOBILITY TRANSISTORS;
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EID: 0034842141
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: None Document Type: Conference Paper |
Times cited : (13)
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References (10)
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