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Volumn 34, Issue 22, 1998, Pages 2133-2135

RT pulsed operation of metamorphic VCSEL at 1.55μm

Author keywords

[No Author keywords available]

Indexed keywords

FIBER OPTIC NETWORKS; LASER PULSES; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

EID: 0032181851     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981508     Document Type: Article
Times cited : (14)

References (9)
  • 1
    • 0031075511 scopus 로고    scopus 로고
    • Continuous wave operation up to 36°C of 1.3μm GaInAsP-InP vertical cavity surface-emitting lasers
    • UCHIYAMA, S., YOKOUCHI, N., and NINOMIYA, T.: 'Continuous wave operation up to 36°C of 1.3μm GaInAsP-InP vertical cavity surface-emitting lasers', IEEE Photonics Technol. Lett., 1997, 9, (2), pp. 141-142
    • (1997) IEEE Photonics Technol. Lett. , vol.9 , Issue.2 , pp. 141-142
    • Uchiyama, S.1    Yokouchi, N.2    Ninomiya, T.3
  • 2
    • 0030241736 scopus 로고    scopus 로고
    • Room temperature pulsed operation of 1.5μm vertical cavity lasers with an InP based Bragg reflector
    • STREUBEL, K., RAPP, S., ANDRE, J., and WALLIN, J.: 'Room temperature pulsed operation of 1.5μm vertical cavity lasers with an InP based Bragg reflector', IEEE Photonics Technol. Lett., 1996, 8, (7), pp. 1121-1123
    • (1996) IEEE Photonics Technol. Lett. , vol.8 , Issue.7 , pp. 1121-1123
    • Streubel, K.1    Rapp, S.2    Andre, J.3    Wallin, J.4
  • 7
    • 0032091503 scopus 로고    scopus 로고
    • InP-based vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors
    • GEBRETSADIK, H., BHATTACHARYA, P.K., KAMATH, K.K., QASAIMEH, O.R., KLOTZKIN, D.J., CANEAU, C., and BHAT, R.: 'InP-based vertical cavity surface emitting laser with epitaxially grown defect-free GaAs-based distributed Bragg reflectors', Electron. Lett., 1998, 34, (13), pp. 1316-1318
    • (1998) Electron. Lett. , vol.34 , Issue.13 , pp. 1316-1318
    • Gebretsadik, H.1    Bhattacharya, P.K.2    Kamath, K.K.3    Qasaimeh, O.R.4    Klotzkin, D.J.5    Caneau, C.6    Bhat, R.7
  • 8
    • 0031166743 scopus 로고    scopus 로고
    • Gas-source molecular beam epitaxy and optical characterization of highly reflective InGaAsP/InP multilayer Bragg mirrors for 1.3μm vertical-cavity lasers
    • SALET, P., PAGNOD-ROSSIAUX, P., GABORIT, F., PLAIS, A., and JACQUET, J.: 'Gas-source molecular beam epitaxy and optical characterization of highly reflective InGaAsP/InP multilayer Bragg mirrors for 1.3μm vertical-cavity lasers', Electron. Lett., 1997, 33, (13), pp. 1145-1147
    • (1997) Electron. Lett. , vol.33 , Issue.13 , pp. 1145-1147
    • Salet, P.1    Pagnod-Rossiaux, P.2    Gaborit, F.3    Plais, A.4    Jacquet, J.5
  • 9
    • 0000529380 scopus 로고
    • Band gap engineered digital alloy interfaces for lower resistance vertical cavity surface emitting lasers
    • PETERS, M.G., THIBEAULT, B.J., YOUNG, D.B., SCOTT, J.W., PETERS, F.H., GOSSARD, A.C., and COLDREN, L.A.: 'Band gap engineered digital alloy interfaces for lower resistance vertical cavity surface emitting lasers', Appl. Phys. Lett., 1993, 63, (25), pp. 3411-3413
    • (1993) Appl. Phys. Lett. , vol.63 , Issue.25 , pp. 3411-3413
    • Peters, M.G.1    Thibeault, B.J.2    Young, D.B.3    Scott, J.W.4    Peters, F.H.5    Gossard, A.C.6    Coldren, L.A.7


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.