Reliability of metamorphic HEMTs on GaAs substrates

GaAs Reliability Workshop, Proceedings

Volumn , Issue , 2001, Pages 119-132

  Marsh, P F ^a   Whelan, C S ^a   Hoke, W E ^a   Leoni III, R E ^a   Kazior, T E ^a  

^a RAYTHEON COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CRYSTAL ATOMIC STRUCTURE; DIFFUSION; ELECTRIC FIELD EFFECTS; METALLIZING; OHMIC CONTACTS; PASSIVATION; RELIABILITY THEORY; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES;

DEVICE RELIABILITY; MEAN TIME TO FAILURES (MTTF);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035746405     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. Production of MHEMTs for microwave and millimeter-wave applications
2. Manufacturability and reliability of InP HEMTs
3. Fluorine limited reliability of AlInAs/InGaAs high electron mobility transistors with molybdenum gates
4. Low noise bias reliability of AlInAs/InGaAs modulation doped field effect transistors