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Volumn 25, Issue 10, 2004, Pages 675-677

InGaAs-InP metamorphic DHBTs grown on GaAs with lattice-matched device performance and fτ, fmax > 268 GHz

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; OPTIMIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR GROWTH; SILICA; THERMAL CONDUCTIVITY;

EID: 5044246559     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.835160     Document Type: Article
Times cited : (17)

References (14)
  • 6
    • 0042172908 scopus 로고    scopus 로고
    • Thermal properties of metamorphic buffer materials for growth of InP double heterojunction bipolar transistors on GaAs substrates
    • May
    • Y. M. Kim, M. Dahlström, M. J. W. Rodwell, and A. C. Gossard, "Thermal properties of metamorphic buffer materials for growth of InP double heterojunction bipolar transistors on GaAs substrates," IEEE Trans. Electron Devices, vol. 50, pp. 1411-1413, May 2003.
    • (2003) IEEE Trans. Electron Devices , vol.50 , pp. 1411-1413
    • Kim, Y.M.1    Dahlström, M.2    Rodwell, M.J.W.3    Gossard, A.C.4
  • 8
    • 5044246794 scopus 로고    scopus 로고
    • Low leakage and high speed InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates
    • Washington, D.C., Dec. 10-12
    • Y. M. Kim, Z. Griffith, M. J. W. Rodwell, and A. C. Gossard, "Low leakage and high speed InP/In0.53Ga0.47As/InP metamorphic double heterojunction bipolar transistors on GaAs substrates," in Proc. Int. Semiconductor Device Research Symp., Washington, D.C., Dec. 10-12, 2003, pp. 350-351.
    • (2003) Proc. Int. Semiconductor Device Research Symp. , pp. 350-351
    • Kim, Y.M.1    Griffith, Z.2    Rodwell, M.J.W.3    Gossard, A.C.4
  • 11
    • 5044248552 scopus 로고    scopus 로고
    • private communication
    • Y. Sin, private communication.
    • Sin, Y.1
  • 12
    • 0036045749 scopus 로고    scopus 로고
    • Metamorphic InP/InGaAs heterojunction bipolar transistors under high-current high temperature stress
    • in Stockholm Sweden May 12-16
    • H. Yang, H. Wang, and K. Radhakrishnan, "Metamorphic InP/InGaAs heterojunction bipolar transistors under high-current and high temperature stress," in Proc. IEEE Int. Conf. Indium Phosphide Related Materials, Stockholm, Sweden, May 12-16, 2002, pp. 369-372.
    • (2002) Proc. IEEE Int. Conf. Indium Phosphide Related Materials , pp. 369-372
    • Yang, H.1    Wang, H.2    Radhakrishnan, K.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.