High performance 0.35 μm gate-length monolithic enhancement/depletion-mode metamorphic In0.52 Al0.48As/In0.53Ga0.47As HEMTs on GaAs substrates

IEEE Electron Device Letters

Volumn 22, Issue 8, 2001, Pages 364-366

  Dumka, D C ^b   Hoke, W E ^c   Lemonias, P J ^c   Cueva, G ^a,b   Adesida, I ^a,b  

^a IEEE

^b University of Illinois at Urbana Champaign   (United States)

^c RAYTHEON COMPANY   (United States)

Author keywords

Depletion; Enhancement; GaAs; HEMT; InAlAs InGaAs; Metamorphic

Indexed keywords

CARRIER MOBILITY; ELECTRIC CURRENTS; MOLECULAR BEAM EPITAXY; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

DRAIN CURRENT; MONOLITHIC ENHANCEMENT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035424696     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.936344     Document Type: Article

References (7)

1. 0.67 As metamorphic HEMT's on GaAs
2. 0.47 As metamorphic HEMT's on GaAs substrate
3. 0.34 As HEMT on GaAs substrate with high breakdown voltage
4. Enhancement-mode InP-based HEMT devices and applications
5. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates
6. Enhancement-mode high electron mobility transistors (E-HEMT's) lattice-matched to InP
7. An analysis of the kink phenomenon in InGaAs/InAlAs HEMT's using two dimensional device simulation