Metamorphic InAlAs/InGaAs enhancement mode HEMT's on GaAs substrates

IEEE Electron Device Letters

Volumn 20, Issue 10, 1999, Pages 507-509

  Eisenbeiser, Kurt ^a   Droopad, Ravi ^a   Huang, Jenn Hwa ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ORIENTATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; SUBSTRATES; TRANSCONDUCTANCE;

ENHANCEMENT MODES; POWER-ADDED-EFFICIENCY (PAE);

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0033321052     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.791925     Document Type: Article

References (13)

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