InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems

Conference Proceedings-International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2000, Pages 341-344

  Ziegler, V ^a   Gaessler C ^a   Woelk, C ^a   Berlec, F J ^a   Deufel, R ^a   Berg, M ^a   Dickmann, J ^a   Schumacher, H ^b   Alekseev, E ^c   Pavlidis, D ^c  

^a DAIMLER AG   (Germany)

^b UNIVERSITY OF ULM   (Germany)

^c UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTION FIELD EFFECT TRANSISTORS (HFET); SINGLE POLE DOUBLE THROW (SPDT);

FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MILLIMETER WAVE DEVICES; PHASE SHIFTERS; PHOTODIODES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR SWITCHES; SPURIOUS SIGNAL NOISE;

MONOLITHIC MICROWAVE INTEGRATED CIRCUITS;

EID: 0033723543     PISSN: 10928669     EISSN: None     Source Type: Journal    
DOI: 10.1109/ICIPRM.2000.850302     Document Type: Article

References (9)

1. J. Bennett, K. Lewinski, P. Shearing, B. Velsher, "Quadpack X-Band T/R Module for Active Phased Array Radar", European Gallium Arsenide and Related III-V Compounds, pp. 63-67, 1999
2. P. Greiling, L. Nguyen, "High Performance Device Technologies for Future Communications Satellites ", European Gallium Arsenide and Related III-V Compounds, pp. 563-568, 1999
3. J. Putnam, M. hkuda, P. Staeker, Y-H. Yun, "A 94 GHz monolithic switch with a vertical PIN diode structure", IEEE GaAs IC Symposium, pp. 333-336, 1994
4. V. Ziegler, M. Berg, H. Tobler, C. Wölk, R. Deufel, J. Dickmann, A. Trasser, H. Schumacher, E. Alekseev, D. Pavlidis, "InP-Based Monolithic Integrated PIN Diode Switches for mm-Wave Applications", European Gallium Arsenide and Related 111-V Compounds, pp. 127-132, 1998
5. E. Alekseev, D. Pavlidis, V. Ziegler, M. Berg, J. Dickmann, "77GHz High-Isolation Transmit/Receive Switch Using In-GaAs/InP PIN Diodes ", GaAs IC Symposium, pp. 177-180, 1998
6. E. Alekseev, T. Hackbarth, J. Dickmann, D. Pavlidis, "High Switching Rate Capability of InGaAs PIN Diodes Switches", Indium Phosphide and Related Materials Conference, pp. 443-446, 1999
7. th Indium Phosphide and Related Materials Conference, pp. 423-425, 1999
8. J. Dickmann, M. Berg, V. Ziegler, C. Wolk, R. Deufel, "MM-Wave HEMT Based Circuits and their System Application", Solid State Electronics, Vol. 43, pp. 1607-1612, 1999
9. V. Ziegler, M. Berg, H. Tobler, C. Wölk, R. Deufel, J. Dickmann, A. Trasser, H. Schumacher, E. Alekseev, D. Pavlidis, "Low-Power Consumption InGaAs PIN Diode Switches for V-Band Applications ", Jap. Journal of Appl. Physics, Vol. 38, pp. 1208-1210, 1999