InAs/AlSb HFETs with fτ and fmax above 150 GHz for low-power MMICs

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 219-222

  Bergman, J ^a   Nagy, G ^a   Sullivan, G ^a   Brar, B ^a   Kadow, C ^b   Lin, H K ^b   Gossard, A ^b   Rodwell, M ^b  

^a ROCKWELL SCIENTIFIC COMPANY   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTANCE; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE MEASUREMENT; GAIN MEASUREMENT; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER ELECTRONICS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; VOLTAGE MEASUREMENT; AMPLIFICATION; BALLOONS; ELECTRON MOBILITY; EPITAXIAL LAYERS; GALLIUM ARSENIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; MODFETS;

ALUMINUM ANTIMONY TRANSISTORS; DRAIN BIAS VOLTAGE; GALLIUM ARSENIDE SUBSTRATES; HIGH CURRENT GAIN; INDIUM ARSENIDE CHANNEL; INDIUM ARSENIDE TRANSISTORS; LOW POWER INTEGRATED CIRCUITS; MAXIMUM POWER GAIN; PARASITIC RESISTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

ELECTRICAL RESISTANCE MEASUREMENT; HEMTS; MMICS; RADIO FREQUENCIES; SHEET MATERIAL;

EID: 0038825217     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Z. Dobrolvolskis, K. Grigoras, and A. Krotkus, "Measurement of the hot-electron conductivity in semiconductors using ultrafast electric pulses," Appl. Phys. A, vol. 48, pp. 245-249, 1989.
2. C. Nguyen, B. Brar, C. R. Bolognesi, J. J. Pekarik, H. Kroemer, and J. H. English, "Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations," J. Electronic Materials, vol. 22, n. 2, pp. 255-258, 1993.
3. J. B. Boos, W. Kruppa, B. R. Bennett, D. Park, S. W. Kirchoefer, R. Bass, and H. B. Dietrich, "AlSb/InAs HEMT's for low-voltage, high-speed applications," IEEE Trans. Electron Devices, vol. 45, pp. 1869-1875, Sept. 1998.
4. B. Brar, G. Nagy, J. Bergman, G. Sullivan, P. Rowell, H.K. Lin, M. Dahlstrom, C. Kadow, and M. Rodwell, "RF and DC characteristics of low-leakage InAs/AlSb HFETs," 2002 Proc. Lester Eastman Conference, pp. 409-413.
5. C. R. Bolognesi, E. J. Caine, and H. Kroemer, "Improved charge control and frequency performance in InAs/AlSb-based heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 15, pp. 16-18, Jan. 1994.
6. J. B. Boos, M. J. Yang, B. R. Bennett, D. Park, W. Kruppa, C.H. Yang, and R. Bass, "0.1 μm AlSb/InAs HEMTs with InAs subchannel," Electronics Lett., vol. 34, pp. 1525-1526, July 1998.
7. B. Brar and H. Kroemer, "Influence of impact-ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistors," IEEE Electron Device Lett., vol. 16, pp. 548-550, Dec. 1995.
8. J. B. Boos, W. Kruppa, D. Park, B. R. Bennett, and R. Bass, "DC, small-signal, and noise characteristics of 0.1 μm AlSb/InAs HEMTs," 1997 Proc. IPRM Conf., pp. 193-196.
9. J. B. Boos, W. Kruppa, D. Park, B. Molnar, R. Bass, M. Goldenberg, B. R. Bennett, and J. Mittereder, "Pd/Pt/Au and AuGe/Ni/Pt/Au ohmic contacts for AlSb/InAs HEMTs," 1996 Proc. IPRM Conf., pp. 354-357.